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making it suitable for high-speed waveform generation and signal processing applications
Audio processing and synthesis
and convenient to carry
Digital LED display for easy parameter monitoring
G75T60AK3HD IGBT IR2118 IC in pakistan making it suitable for high-speedType: IGBT + Anti Parallel Diode Type of IGBT Channel: N Pc Maximum Power Dissipation: 390 W Vce Maximum Collector Emitter Voltage: 600 V Vge Maximum Gate Emitter Voltage: 20 V Ic Maximum Collector Current: 150 A @25 VCEsat Collector Emitter saturation Voltage, typ: 1. 7 V @25 VGEth Maximum G E Threshold Voltag: 7 V Tj Maximum Junction Temperature: 150 tr Rise Time, typ: 92 nS Coes Output Capacitance, typ: 268 pF Qg Total Gate Charge, typ: 433 nC
